Snapdragon 835 chipset that will power the Galaxy S8, described the first unofficial specifications

Snapdragon 835 and Snapdragon accessible range to 660 were disclosed with a first set of specifications unofficial Asian published on a website.

Referenced and named Snapdragon 830, the new Qualcomm chipset reserved for high-end mobile code-named MSM 8998 and is made using 10 nm manufacturing process or FinFET transistor technology. Equipped with a revised Kryo core, Snapdragon 835 would make the transition to an octa-core CPU module divided between high-performance quad-core and quad-core module optimized for efficient use of the battery. The graphical interface is provided with an Adreno 540 GPU series Equipment list is completed by an X16 module LTE, support for solutions based storage format UFS 2.1 and RAM memory controller able to manage up to 4 chip running at LPDDR4X 1866 MHz.


Codenamed MSM 8976, 660 Snapdragon uses 14nm manufacturing process with low-power lithography, targeting a slightly reduced level of performance. The chip keeps octa-core CPU configuration, but less performance using a version of the kernel Kryo. Similarly, the graphical interface is provided with an Adreno 512 GPU series, inferior in terms of performance offered. The offer is completed with an X10 mode LTE and memory controller able to manage two RAM chips operating at 1866 MHz LPDDR4X.

Snapdragon chipset 835 would be available in Q1-2017 range, the first devices based on it (ex. Samsung Galaxy S8) arriving during MWC 2017 exhibition (February 27-March 2). The first devices with Snapdragon chipset will arrive at mid-660, between Q2-2017.

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